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LM3641 データシート (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641 Datasheet PDF - National Semiconductor (TI)
部品番号 LM3641
ダウンロード  LM3641 ダウンロード
ファイルサイズ   304.04 Kbytes
ページ   16 Pages
メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)
部品情報 Lithium-Ion Battery Pack Protection Circuit

LM3641 Datasheet (PDF)

Go To PDF Page ダウンロード データシート
LM3641 Datasheet PDF - National Semiconductor (TI)

部品番号 LM3641
ダウンロード  LM3641 Click to download

ファイルサイズ   304.04 Kbytes
ページ   16 Pages
メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)
部品情報 Lithium-Ion Battery Pack Protection Circuit

LM3641 データシート (HTML) - National Semiconductor (TI)


LM3641 製品詳細

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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National Semiconductor (TI) について


National Semiconductorは、1959年に設立されたアメリカの半導体会社でした。
同社は、アナログと混合シグナルの統合回路の分野での革新で知られており、電力管理およびデータ変換製品の大手サプライヤーでした。
National Semiconductorの製品は、家電、産業、自動車、通信など、さまざまなアプリケーションで使用されていました。
同社は2011年にテキサスインストゥルメントに買収され、その製品と技術は引き続きテキサスインストゥルメントブランドの下で開発および販売されています。

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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