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STP6308 データシート (PDF) - Stanson Technology

部品番号	STP6308

部品情報	STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ファイルサイズ	420.88 Kbytes

Html View	1 2 3 4 5 6

メーカー	STANSON [Stanson Technology]

ホームページ	http://www.stansontech.com

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STP6308 データシート (PDF) - Stanson Technology

同様の部品番号 - STP6308

メーカー	部品番号	データシート	部品情報
Stanson Technology	STP601	398Kb / 7P	P Channel Enhancement Mode MOSFET
Stanson Technology	STP601D	676Kb / 7P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STP601D	971Kb / 7P	P-Channel 60 V (D-S) MOSFET
Stanson Technology	STP607D	1Mb / 8P	P Channel Enhancement Mode MOSFET
SHENZHEN DOINGTER SEMIC...	STP60L60	1Mb / 3P	N-Channel MOSFET uses advanced trench technology

同様の説明 - STP6308

メーカー	部品番号	データシート	部品情報
Stanson Technology	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2341A	582Kb / 6P	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3401SRG	212Kb / 6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	ST3407SRG	184Kb / 6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4803	697Kb / 7P	STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4925	577Kb / 6P	STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP7401	461Kb / 6P	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9437	375Kb / 6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9527	927Kb / 7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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