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RC2012 データシート (PDF) - Samsung semiconductor

部品番号 RC2012
部品情報  Owing to the reduced lead inductance, the high frequency characteristic is excellent.
ファイルサイズ   791.37 Kbytes
Html View  1   2 
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

RC2012 データシート (PDF) - Samsung semiconductor



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同様の説明 - RC2012

メーカー部品番号データシート部品情報
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ice Components, Ins.
IN08034 ICE-IN08034 Datasheet
37Kb / 2P
Isat is the current at which the inductance drops by 15%.
IN08035 ICE-IN08035 Datasheet
37Kb / 2P
Isat is the current at which the inductance drops by 15%.
IN08052 ICE-IN08052 Datasheet
37Kb / 2P
Isat is the current at which the inductance drops by 15%.
IN08070 ICE-IN08070 Datasheet
56Kb / 2P
Isat is the current at which the inductance drops by 20%.
IN08106 ICE-IN08106 Datasheet
37Kb / 2P
Isat is the current at which the inductance drops by 20%.
IN08124 ICE-IN08124 Datasheet
35Kb / 2P
Isat is the current at which the inductance drops by 20%.
IN08127 ICE-IN08127 Datasheet
37Kb / 2P
Isat is the current at which the inductance drops by 15%.
IN08137 ICE-IN08137 Datasheet
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Isat is the current at which the inductance drops by 20%.
IN08144 ICE-IN08144 Datasheet
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Isat is the current at which the inductance drops by 20%.
IN09004 ICE-IN09004 Datasheet
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Isat is the current at which the inductance drops by 15%.
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