| データシートサーチシステム |
|
N06G-AA3-R 販売店 |
| 販売店 | 部品番号 | メーカー | 部品情報 | Price | Qty. BuyNow | |
![]() GLYN GmbH & Co. KG | FEMDNN064G-C9A61 | Shenzhen Longsys Electronics Co Ltd | eMMC 5.1, 64GB, 3D TLC, BGA(153), -25øC to 85øC | 148 | ||
![]() Rutronik | IAUC60N06S5L073ATMA1 | Infineon Technologies AG | N-CH 60V 60A 6mOhm TDSON-8-33 RoHS : Compliant |
| 95,000 | |
| IAUC120N06S5L032ATMA1 | Infineon Technologies AG | N-CH 60V 120A 2,5mOhm TDSON-8 RoHS : Compliant |
| 60,000 | ||
| IAUZ30N06S5L140ATMA1 | Infineon Technologies AG | N-CH 60V 30A 11,2mOhm TSDSON-8 RoHS : Compliant |
| 10,000 | ||
IPB026N06NATMA1![]() | Infineon Technologies AG | N-CH 60V 100A 2,3mOhm D2PAK RoHS : Compliant |
| 3,000 | ||
IPB010N06NATMA1![]() | Infineon Technologies AG | N-CH 60V 180A 1mOhm TO263-7 RoHS : Compliant |
| 2,000 | ||
IPB081N06L3GATMA1![]() | Infineon Technologies AG | N-CH 60V 50A 8,1mOhm TO263-3 RoHS : Compliant |
| 1,000 | ||
IPB090N06N3GATMA1![]() | Infineon Technologies AG | N-CH 60V 50A 8mOhm TO263-3 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | N-CH 55V 80A 6.7mOHM TO263 RoHS : Compliant |
| 1,000 | ||
IPB80N06S405ATMA2![]() | Infineon Technologies AG | N-CH 60V 80A 4,4mOhm D2PAK RoHS : Compliant |
| 1,000 | ||
IPB80N06S407ATMA2![]() | Infineon Technologies AG | N-CH 60V 80A 7,1mOhm TO263 RoHS : Compliant |
| 1,000 | ||
| IPB013N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 198A 1,3mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB015N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 172A 1,5mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB029N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 119A 2,9mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB018N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 185A 1,8mOhm TO-263 RoHS : Compliant |
| 840 | ||
IPA032N06N3GXKSA1![]() | Infineon Technologies AG | N-CH 60V 84A 3200mOhm TO220FP RoHS : Compliant |
| 350 | ||
![]() Chip-Germany GmbH | FEMDNN064G-C9A61 | FORESEE | 10,000 | |||
| FEUDNN064G-C2G07 | FORESEE | 10,000 | ||||
FDD10AN06A0![]() | Fairchild Semiconductor Corporation | RoHS : Compliant | 39 | |||
| SFX5002-5DN06 | Siemens | 23 | ||||
FDB050AN06A0![]() | Fairchild Semiconductor Corporation | RoHS : Compliant | 14 | |||
| PHT6N06LT | Philips Semiconductors | RoHS : Compliant | 10 | |||
| SSN06464O3B42MT-60 | KONON | 4 | ||||
![]() Maritex | PJD11N06A-AU_L2_000A1 | PanJit Semiconductor | MOSFETs; PJD11N06A-AU_L2_000A1; PANJIT; 3.7 A; 75 m? RoHS : Compliant |
| 57,000 | |
| PJD16N06A-AU_L2_000A1 | PanJit Semiconductor | MOSFETs; PJD16N06A-AU_L2_000A1; PANJIT RoHS : Compliant |
| 15,000 | ||
| UT3N06G-AB3-R | Unisonic Technologies Co Ltd | MOSFETs; UT3N06G-AB3-R; UTC; 3 A; 90 m? RoHS : Compliant |
| 14,155 | ||
| UT3N06G-AE3-R | Unisonic Technologies Co Ltd | MOSFETs; UT3N06G-AE3-R; UTC; 3 A; 90 m?; 350 mW RoHS : Compliant |
| 2,179 | ||
| ESDCAN06-2BLY | STMicroelectronics | Diode: TVS array; bidirectional; double;;38V; 3A; 230W; -40+150 deg.C ; SMD; SOT23-3L RoHS : Compliant |
| 2,000 | ||
| WSF80N06H | Winsok Semiconductor | Transistor: N-MOSFET; unipolar;60V; 80A; 9.1mohm; 110W; -55+175 deg.C; SMD; TO252 |
| 1,598 | ||
| PJD45N06A_L2_00001 | PanJit Semiconductor | Transistor: N-MOSFET; unipolar; 60V; 45A; 0.012ohm; 63W; -55+150 deg.C; SMD; TO252AA (DPAK) RoHS : Compliant |
| 250 | ||
| DI050N06D1-Q | Diotec Semiconductor AG | MOSFETs; DI050N06D1-Q; DIOTEC SEMICONDUCTOR RoHS : Compliant |
| 237 | ||
| DI020N06D1 | Diotec Semiconductor AG | MOSFETs; DI020N06D1; DIOTEC SEMICONDUCTOR; 20 A RoHS : Compliant |
| 230 | ||
| DI020N06D1-Q | Diotec Semiconductor AG | MOSFETs; DI020N06D1-Q; DIOTEC SEMICONDUCTOR RoHS : Compliant |
| 214 | ||
| UTT15N06G-P5060-R | Unisonic Technologies Co Ltd | MOSFETs; UTT15N06G-P5060-R; UTC |
| 100 | ||
| UTT70N06G-TND-R | Unisonic Technologies Co Ltd | MOSFETs; UTT70N06G-TND-R; UTC RoHS : Compliant |
| 100 | ||
| UTT50N06 | VBsemi Electronics Co Ltd | Transistor: N-MOSFET; unipolar; 60V; 58A; 0,016ohm;136W; -55+175 st.C; SMD; TO-252 |
| 96 | ||
| DI017N06PQ-AQ | Diotec Semiconductor AG | MOSFETs; DI017N06PQ-AQ; DIOTEC SEMICONDUCTOR RoHS : Compliant |
| 91 | ||
| DIT050N06 | Diotec Semiconductor AG | MOSFETs; DIT050N06; DIOTEC SEMICONDUCTOR; 50 A RoHS : Compliant |
| 57 | ||
![]() Relay Specialties | OTB-406N-06P-FB | BlockMaster Blocks | Barrier Terminal Block; 6-pos 0.394"; SEMS |
| 23 | |
| OTB-330N-06P-FB | BlockMaster Blocks | Term Blk; 6-pos; 0.512"; Thru Screws; Ni; M4; Ends; 50A 600V; PC; Black; SEMS Cover |
| 16 | ||
| OTB-358N-06P-C | BlockMaster Blocks | Term Blk; 6-pos; 0.630"; Thru Screws; Ni; M5; Ends; 100A 600V; PC; Black; Cover |
| 16 | ||
![]() TE Connectivity | ADEN06TTU04 | TE Connectivity | ADE Next Gen. 06 Pos. THT TU DIP & SIP Switch Type: DIP Switch Contact Plating Material: Gold Flash Case Color: Black Case Material: PA9T Sealed Device: No DIP Gold Flash Black PA9T | Dip Switch | Part Number: ADEN06TTU04 | Internal Number: 2454982-4 | TE Connectivity RoHS : Compliant |
| 1,912 | |
![]() Vyrian | RSD050N06TL![]() | ROHM Semiconductor | Power Field-Effect Transistor, 5A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 15,500 | ||
| PHB21N06LT/T3 | Nexperia | Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 13,322 | |||
IPI024N06N3GXKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 12,997 | |||
PHP21N06T,127![]() | Nexperia | Power Field-Effect Transistor, 21A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 11,789 | |||
| VN06-E | STMicroelectronics | Peripheral Driver, 1 Driver, PZIP5 RoHS : Compliant | 9,831 | |||
| IPI80N06S208AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 6,965 | |||
IPI80N06S207AKSA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 6,791 | |||
IPB110N06LG![]() | Infineon Technologies AG | Power Field-Effect Transistor, 78A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 6,513 | |||
| MAX6501UKN065-T | Analog Devices Inc | Analog Circuit, 1 Func, PDSO5 RoHS : Not Compliant | 5,847 | |||
| IPD90N06S4L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS : Compliant | 4,399 | |||
IPB090N06N3GATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 4,195 | |||
| PHT8N06LTT/R | Nexperia | Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 4,045 | |||
| PHD21N06LT | Nexperia | Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 3,545 | |||
| PHT6N06LTT/R | Nexperia | Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 2,633 | |||
| M85049/18-21N06A | Defense Logistics Agency | Connector Accessory, Backshell-shielded, Aluminum | 249 | |||
![]() Waytek, Inc. | HWN0.63 | Techflex Inc | Techflex HWN0.63 Heavy Wall Expandable Sleeving is black 5/8" braided polyester sleeving on a 250' spool. It features a 15 mil heavy wall, fits recommended bundle sizes from 5/16" to 1", and is designed to slip over wire harnesses or tubing for abrasion protection and cable bundling. |
| 4,250 | |
| HWN0.63 | Techflex Inc | Techflex HWN0.63 Heavy Wall Expandable Sleeving is black 5/8" braided polyester sleeving on a 50' spool. It features a 15 mil heavy wall, fits recommended bundle sizes from 5/16" to 1", and is designed to slip over wire harnesses or tubing for abrasion protection and cable bundling. |
| 1,400 | ||
| BBN0.63OR | Techflex Inc | Techflex BBN0.63OR Battle Braid Heavy-Duty Cut Resistant Sleeving is orange 5/8"-11/16" polyester sleeving in a 25' length. It offers over 330 lb. cut-through resistance, extremely high abrasion protection, and high-visibility orange identification for EV and heavy-duty cable protection. |
| 425 | ||
![]() Wuhan P&S | NTH4L023N065M3S | onsemi | SIC MOS TO247-4L 23MOHM 6 RoHS : Compliant |
| 68,977 | |
| NTBG023N065M3S | onsemi | SIC MOS D2PAK-7L 23MOHM 6 RoHS : Compliant |
| 40,000 | ||
| NTH4L045N065SC1 | onsemi | 650V, 43.8 m��,N-Channel Power MOSFET RoHS : Compliant |
| 20,250 | ||
| NTBL032N065M3S | onsemi | Silicon Carbide (SiC)MOSFET RoHS : Compliant |
| 13,328 | ||
| NTH4L012N065M3S | onsemi | SIC MOS TO247-4L 12MOHM 6 RoHS : Compliant |
| 10,350 | ||
| ESDCAN06-2BWY | STMicroelectronics | Automotive dual-line TVS in SOT323-3L for CAN bus RoHS : Compliant |
| 10,000 | ||
| NTMFSC1D6N06CTWG | onsemi | 60V, 1.5m��, 238A,Single N-Channel Power MOSFET |
| 6,000 | ||
| NTH4L025N065SC1 | onsemi | Silicon Carbide (SiC) MOSFET RoHS : Compliant |
| 450 |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved짤Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |