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W2TS-1BA-R2/N 販売店 |
| 販売店 | 部品番号 | メーカー | 部品情報 | Price | Qty. BuyNow | |
![]() Maritex | LM7805L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7805L(W2) TO-220; UTC |
| 350 | |
| LM7815L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7815L(W2) TO-220; UTC |
| 82 | ||
![]() Venkel Ltd. | CTL1206FYW2T | VENKEL LTD | Chip Type LED;1206;Flat Lens;Yellow RoHS : Compliant | 0 | ||
| PLCC352820FYW2T | VENKEL LTD | PLCC LED;352820;Flat Lens;Yellow RoHS : Not Compliant | 0 | |||
![]() Vyrian | FP35R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,064 | ||
| FS100R12W2T7B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,795 | |||
| FP35R12W2T4PBPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,788 | |||
| FS75R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,896 | |||
| FS75R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,568 | |||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,776 | |||
| FP35R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,206 | |||
| FS50R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,182 | |||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES RoHS : Compliant | 8,023 | |||
| FS50R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,752 | |||
| NSVR1020MW2T1G | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 7,038 | |||
| FP35R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 6,165 | |||
| FP25R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 5,788 | |||
MBT3904DW2T1![]() | onsemi | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon RoHS : Not Compliant | 5,575 | |||
| NSR1020MW2T1G-AU | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 774 |
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