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W2TS-4A3-R2/N 販売店 |
| 販売店 | 部品番号 | メーカー | 部品情報 | Price | Qty. BuyNow | |
![]() Ameya Holding Limited | QS5W2TR | ROHM Semiconductor | Complex Transistor(BIP+BIP) RoHS : Compliant |
| 3,000 | |
![]() ComSIT USA | NSR1020MW2T1G | onsemi | 20V SOD-323 Schottky Barrier Diode Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 4,205 | ||
| FP35R12W2T4 | Infineon Technologies AG | IGBT-MODULE Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7 | |||
![]() PUI | 9W2TJ48P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 40 | |
| 9W2TJ24P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 24 | ||
| 9W2TN48P1H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 12 | ||
![]() Richardson RFPD | PCAAW-2-TR | Spectrum Control | PCB MOUNT ATTENUATOR RoHS : Compliant | 0 | ||
![]() Chip 1 Exchange | NSR0320MW2T1G | INSTOCK | 206,358 | |||
FMW2T148![]() | ROHM Semiconductor | INSTOCK | 2,000 | |||
| HEX15-13.40156MHZ-12-40-F-H2-T3-W2-T | INSTOCK | 884 | ||||
| HEX15-13.56875MHZ-12-40R-F-H2-T3-W2-T | INSTOCK | 765 | ||||
![]() Avnet Abacus | MEC5-060-01-L-RA-W2-TR | Samtec Inc | (Alt: MEC5-060-01-L-RA-W2-TR) RoHS : Compliant | 0 | ||
| MEC5-040-01-L-RA-W2-TR | Samtec Inc | (Alt: MEC5-040-01-L-RA-W2-TR) RoHS : Compliant | 0 | |||
![]() Component Electronics, Inc | NSR0320MW2T1G | onsemi | IN STOCK SHIP TODAY RoHS : Compliant |
| 4,725 | |
| 592D108X06R3W2T | Vishay Intertechnologies | IN STOCK SHIP TODAY | 1,000 | |||
![]() Flip Electronics | NSRLV20MW2T1G | onsemi | Stock, Ship Today RoHS : Compliant |
| 39,000 | |
![]() Maritex | LM7805L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7805L(W2) TO-220; UTC |
| 350 | |
| LM7815L(W2) TO-220 | Unisonic Technologies Co Ltd | LDO Regulators; LM7815L(W2) TO-220; UTC |
| 82 | ||
![]() Venkel Ltd. | CTL1206FYW2T | VENKEL LTD | Chip Type LED;1206;Flat Lens;Yellow RoHS : Compliant | 0 | ||
| PLCC352820FYW2T | VENKEL LTD | PLCC LED;352820;Flat Lens;Yellow RoHS : Not Compliant | 0 | |||
![]() Vyrian | FP35R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,064 | ||
| FS100R12W2T7B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,795 | |||
| FP35R12W2T4PBPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,788 | |||
| FS75R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,896 | |||
| FS75R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,568 | |||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,776 | |||
| FP35R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,206 | |||
| FS50R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,182 | |||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES RoHS : Compliant | 8,023 | |||
| FS50R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,752 | |||
| NSVR1020MW2T1G | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 7,038 | |||
| FP35R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 6,165 | |||
| FP25R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 5,788 | |||
MBT3904DW2T1![]() | onsemi | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon RoHS : Not Compliant | 5,575 | |||
| NSR1020MW2T1G-AU | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 774 | |||
![]() Win Source Electronics | NSR0320MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 / Rectifier Diode Schottky 23V 1A 2-Pin SOD-323 T/R RoHS : Compliant |
| 360,000 | |
| NSR0320MW2T1 | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Not Compliant |
| 185,870 | ||
| NSR1020MW2T3G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 143,750 | ||
| NSR1020MW2T1G | onsemi | Rectifier Diode Schottky 1A 2-Pin SOD-323 T/R / DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 142,840 | ||
| NSR0320MW2T3G | onsemi | Rectifier Diode Schottky 23V 1A 2-Pin SOD-323 T/R / DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 140,000 | ||
| NSVR0320MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 120,000 | ||
| WSB5543W-2/TR | Will Semiconductor Ltd | Middle Power Schottky Barrier Diode |
| 61,800 | ||
| ESD5601W-2/TR | Will Semiconductor Ltd |
| 14,443 | |||
| FP25R12W2T4 | Infineon Technologies AG | IGBT-Wechselrichter / IGBT-inverter RoHS : Compliant |
| 1,800 | ||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | IGBT MOD 1200V 39A 175W RoHS : Compliant |
| 1,710 | ||
| NSVR1020MW2T1G | onsemi | DIODE SCHOTTKY 20V 1A SOD323 RoHS : Compliant |
| 700 |
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