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BYP35A05 データシート(PDF) 2 Page - Diotec Semiconductor |
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BYP35A05 データシート(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() BYP35A05 ... BYP35A6 | BYP35K05 ... BYP35K6 Characteristics Kennwerte Forward Voltage Durchlass-Spannung Tj = 25°C IF = 35 A VF < 1.1 V Leakage Current Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA Typical junction capacitance Typische Sperrschichtkapzität VR = 4 V Cj 250 pF Reverse recovery time Sperrverzug IF = 0.5 A through/über IR = 1 A to IR = 0.25 A trr typ. 1500 ns Thermal resistance junction to metallic base Wärmewiderstand Sperrschicht – Metallsockel RthC < 0.8 K/W 1) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Temperature measured at the metallic base – Temperatur am Metallsockel gemessen 2 http://www.diotec.com/ © Diotec Semiconductor AG 10 10 10 1 10 3 2 -1 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 270a-(25a-1,1v) Peak forward surge current versus number of cycles at 50 Hz Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 10 10 10 3 2 [A] î F 1 10 10 [n] 10 2 3 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. [°C] T C 150 100 50 0 200 |
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