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IPS032G データシート(PDF) 1 Page - International Rectifier |
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IPS032G データシート(HTML) 1 Page - International Rectifier |
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1 / 11 page ![]() Features • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD 60151-J Description The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switch- ing times and provides efficient protection by turning off the power MOSFET when the temperature ex- ceeds 165 oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demag- netizations. Product Summary Rds(on) 70m Ω (max) V clamp 50V Ishutdown 12A Ton/Toff 1.5 µs Typical Connection S Q Load D S control IN R in series (if needed) Logic signal www.irf.com 1 Packages 8-Lead SOIC IPS031G 16-Lead SOIC IPS032G (Dual) (Refer to lead assignment for correct pin assignment) |
同様の部品番号 - IPS032G |
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同様の説明 - IPS032G |
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