2N5796U datasheet(2/3 Pages) TTELEC

2 / 3 page

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Surface Mount Dual PNP

Transistor

2N5796U (TX, TXV)

Issue C

08/2016

Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Collector‐Emi er Voltage

60 V

Collector‐Base Voltage

60 V

Emi er‐Base Voltage

5 V

Collector Current‐Con nuous

600 mA

Opera ng Junc on Temperature (TJ) ‐65° C to +200 °C

Storage Junc on Temperature (Tstg) ‐65° C to +200° C

Power Dissipa on @ TA = 25°C

0.5 W

Power Dissipa on @ Tc = 25° C

0.6 W

(1)

Soldering Temperature (vapor phase reﬂow for 30 seconds)

215° C

Soldering Temperature (heated collet for 5 seconds)

260° C

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

OFF CHARACTERISTICS

V(BR)CBO

Collector‐Base Breakdown Voltage

IC = 10 µA

V(BR)CEO

Collector‐Emi er Breakdown Voltage

IC = 10 mA

(1)

V(BR)EBO

Emi er‐Base Breakdown Voltage

IE = 10 µA

ICBO1

Collector‐Base Cutoﬀ Current

VCB = 50 V

ICBO2

Collector‐Base Cutoﬀ Current

µA

VBC = 50 V, TA = 150°C

IEBO

Emi er‐Base Cutoﬀ Current

100

VEB = 3 V

hFE1

Forward‐Current Transfer Ra o

‐

VCE = 10 V, IC = 100 µA

hFE2

100

‐

VCE = 10 V, IC = 1.0 mA

hFE3

100

‐

VCE = 10 V, IC = 10 mA

(1)

hFE4

100

300 ‐

VCE = 10 V, IC = 150 mA

(1)

hFE5

‐

VCE = 10 V, IC = 300 mA

(1)

hFE6

‐

VCE = 1.0 V, IC = 150 mA

(1)

hFE7

‐

VCE = 10 V, IC = 150 mA, TA = ‐55° C

(1)

Note:

1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle

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