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データシートサーチシステム |
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データシートサーチシステム |
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IRFP4227 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP4227 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP4227，IIRFP4227 · FEATURES · Static drain-source on-resistance: RDS(on)≤21mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · High Repetitive Peak Current Capability for Reliable Operation · Short fall & Rise Times For Fast Switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 65 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 330 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -40~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.45 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 62 ℃ /W |
同様の部品番号 - IRFP4227 |
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同様の説明 - IRFP4227 |
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