BC856S datasheet(2/3 Pages) MCC

部品番号	BC856S

部品情報	PNP Plastic-Encapsulate Transistors 200mW

PDF	3 Pages

Scroll/Zoom	100%

メーカー	MCC [Micro Commercial Components]

ホームページ	http://www.mccsemi.com

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2 / 3 page

Revision: B

2013/01/01

ELECTRICAL CHARACTERISTICS(Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-10µA,IE=0

-80

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-10mA,IB=0

-65

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA,IC=0

-5

Collector cut-off current

ICBO

VCB=-30V,IE=0

-15

DC current gain

hFE

VCE=-5V,IC=-2mA

110

VCE(sat)(1)

IC=-10mA,IB=-0.5mA

-0.1

Collector-emitter saturation voltage

VCE(sat)(2)

IC=-100mA,IB=-5mA

-0.3

Base-emitter voltage

VBE(sat)

I C=-10V,IB=-0.5mA

0.7

Transition frequency

VCE=-5V,IC=-10mA,f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

2.5

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BC856S

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-100

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