IF1320 datasheet(1/1 Pages) INTERFET

部品番号	IF1320

部品情報	N-Channel Silicon Junction Field-Effect Transistor

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メーカー	INTERFET [InterFET Corporation]

ホームページ	http://www.interfet.com

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1 / 1 page

B-30

01/99

IF1320

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 20 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

225 mW

Power Derating

1.8 mW°C

Storage Temperature Range

– 65°C to 200°C

TOÐ236AB Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

At 25°C free air temperature:

IF1320

Process NJ132L

Static Electrical Characteristics

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 20

V

IG = – 1 µA, VDS = ØV

Gate Reverse Current

IGSS

– 0.1

nA

VDS = ØV, VGS = – 10V

Gate Source Cutoff Voltage

VGS(OFF)

– 0.35

– 1.5

V

VDS = 10V, ID = 0.5 nA

Drain Saturation Current (Pulsed)

IDSS

520

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source

gfs

15

mS

VDS = 10V, ID = 5 mA

f = 1 kHz

Forward Transconductance

Common Source Input Capacitance

Ciss

20

pF

VDS = 10V, ID = 5 mA

f = 1 MHz

Common Source

Crss

5pF

VDS = 10V, ID = 5 mA

f = 1 MHz

Reverse Transfer Capacitance

Typ

Equivalent Short Circuit

¯eN

2.5

nV/

√Hz V

DS = 10 V, ID = 5 mA

f = 1 kHz

Input Noise Voltage

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/14/99 1:50 PM

Page B-30

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