IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 01N100D

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 50 V; I

Note 1

100

150

mS

C

iss

120

pF

C

oss

V

GS

= -10 V, V

15

pF

C

rss

3pF

t

d(on)

8n s

t

r

V

gs

= 0 V, to -10 V, I

6

n s

t

d(off)

V

ds

= 100 V

30

n s

t

f

R

G

= 30

Ω, (External)

51

n s

R

thJC

5

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

SD

V

Note 1

1.0

1.5

V

t

rr

I

1.5

µs

V

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 AD Dimensions

Note 1: Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %