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TCD2000P データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 TCD2000P
部品情報  TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)
PDF  11 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TCD2000P データシート(HTML) 3 Page - Toshiba Semiconductor

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TCD2000P
2002-03-08
3
OPTICAL / ELECTRICAL CHARACTERISTICS
(Ta = 25°C VREF = VAD = VDD1 = VDD2 = 12V, VφM = Vφ = VSH = 5V (PULSE), fφ = 1.0MHz,
tINT (INTEGRATION TIME) = 10ms, LIGHT SOURCE = A LIGHT SOURCE+CM500S FILTER,
LOAD RESISTANCE = 100Ω)
CHARACTERISTIC
SYMBOL
MIN
TYP.
MAX
UNIT
NOTE
RB
3.7
5.3
6.9
RG
8.4
12.0
15.6
Sensitivity
RR
4.6
6.6
8.7
V / lx·s
PRNU (1)
10
20
%
(Note 2)
Photo Response Non Uniformity
PRNU (3)
3
12
mV
(Note 3)
Saturation Output Voltage
VSAT
1.2
2.0
V
(Note 4)
Saturation Exposure
SE
0.17
lx·s
(Note 5)
Dark Signal Voltage
VDRK
12
25
mV
(Note 6)
Dark Signal Non Uniformity
DSNU
5
10
mV
(Note 6)
Analog Current Dissipation
IAD
12
18
mA
IDD1
1
mA
Digital Current Dissipation
IDD2
13.5
20
mA
Input Current of VREF
IREF
1
mA
Total Transfer Efficiency
TTE
92
%
Output Impedance
ZO
0.5
1.0
kΩ
DC Signal Output Voltage
VOS
4.5
6.0
7.5
V
(Note 7)
DC Compensation Output Voltage
VDOS
4.5
6.0
7.5
V
(Note 7)
DC Differential Error Voltage
|VOS−VDOS|0
100
mV
Note 2: PRNU (1) is measured at 50% of SE (Typ.)
Definition of PRNU : PRNU =
?
?
,
100 (%)
Where ? is average of total signal outputs and ?
, is the maximum deviation from ? under uniform illumination.
Note 3: PRNU (3) is defined as maximum voltage with next pixel where measured 5% of SE (Typ.)
Note 4: VSAT is defined as minimum Saturation Output Voltage of all effective pixels.
Note 5: Definition of SE : SE =
R
SAT
V
(lx·s)
Note 6: VDRK is defined as average dark signal voltage of all effective pixels.
DSNU is defined as different voltage between VDRK and VMDK when VMDK is maximum dark signal voltage.



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