IXTP2N100 datasheet(1/4 Pages) IXYS

部品番号	IXTP2N100

部品情報	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

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メーカー	IXYS [IXYS Corporation]

ホームページ	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C2

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

8A

I

A

T

C = 25°C2

A

E

AS

T

C = 25°C

150

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

100

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

DS97540B(04/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

2.0

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

100

μΑ

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

7

Ω

High Voltage

MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA2N100

IXTP2N100

V

DSS

= 1000V

I

D25

= 2A

R

DS(on) ≤

≤≤≤≤ 7Ω

Ω

Features

International Standard Packages

Avalanche Rated

Low Package Inductance (< 5nH)

Fast Switching Times

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Switched-Mode and Resonant-Mode

Power Supplies

FlyBack Inverters

DC Choppers

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

G

S

(TAB)

同様の部品番号 - IXTP2N100

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IXTP2N100 データシート(PDF) 1 Page - IXYS Corporation

IXTP2N100 データシート(HTML) 1 Page - IXYS Corporation

同様の部品番号 - IXTP2N100

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同様の部品番号 - IXTP2N100

同様の説明 - IXTP2N100

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