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PIP202-12M データシート(PDF) 10 Page - NXP Semiconductors

部品番号 PIP202-12M
部品情報  DC to DC converter powertrain
PDF  20 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PIP202-12M データシート(HTML) 10 Page - NXP Semiconductors

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Philips Semiconductors
PIP202-12M
DC to DC converter powertrain
Product data
Rev. 01 — 15 July 2002
10 of 20
9397 750 10031
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
At 500 KHz and 20 A output current, the maximum dissipation in each PIP202-12M is
5.7 W. The typical thermal resistance from junction to ambient is given in Table 4.
With thermal vias and forced air cooling, the thermal resistance of each PIP202-12M
from junction to ambient is15 K/W. Assuming a maximum ambient temperature of
55
°C, the maximum junction temperature (T
j(max)) is given by:
(1)
The thermal resistance between the junction and the printed-circuit board is 5 K/W.
Therefore, the maximum printed-circuit board temperature (Tpcb(max)) is given by:
(2)
11.2 Advantages of an integrated driver
One problem in the design of low-voltage, high-current DC to DC converters using
discrete components, is stray inductance between the various circuit elements.
Stray inductance in the gate drive circuit increases the switching times of the
MOSFETs and causes high-frequency oscillation of the gate voltage.
Stray inductance in the high-current loop between VDDO and VSSO causes switching
losses and electromagnetic interference. In discrete designs, high-frequency electric
and magnetic fields radiate from PCB tracks and couple into adjacent circuits.
By integrating the power MOSFETs and their drive circuits into a single package,
stray inductance is virtually eliminated, resulting in a compact, efficient design.
In discrete designs, the delays in the MOSFET drivers must be long enough to
ensure no cross-conduction even when using the slowest MOSFETs. Use of an
integrated driver allows the propagation delays in the MOSFET drivers to be precisely
matched to the MOSFETs. This minimizes switching losses and eliminates
cross-conduction whilst allowing the circuit to operate at a higher frequency.
11.3 External connection of power and signal lines
A major benefit of the PIP202-12M module is the ability to switch the internal power
MOSFETs faster than a DC to DC converter built from discrete components. This not
only reduces switching losses and increases system efficiency but it also results in
higher transient voltages on the device supply lines (VDDO and VSSO). This is due to
the high rate of change of current (dI/dt) through the combined parasitic inductance of
the PCB tracks and the decoupling capacitors.
To minimize the amplitude of these transients, decoupling capacitors must be placed
between VDDO and VSSO, as close as possible to the device pins. Low inductance,
chip ceramic capacitors are recommended.
T
j max
()
P
tot
R
th j
a
()
×
T
amb
+
5.7
15
55
+
×
140.5
°C
==
=
T
pcb max
()
T
j max
()
P
tot
R
th j
pcb
()
×
140.5
5.7
5
×
112
°C
==
=



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