FZT855 datasheet(4/7 Pages) DIODES

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FZT855

Document Number DS33176 Rev. 7 - 2

4 of 7

www.diodes.com

April 2017

FZT855

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

250

375

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

250

375

—



IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

150

180

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cut-Off Current

ICBO

—



—



µA

VCB = 200V

VCB = 200V, @TA = +100°C

Collector Cut-Off Current

ICER

—



—



µA

VCE = 200V, R ≤ 1kΩ

VCE = 200V, @TA = +100°C

Emitter Cut-Off Current

IEBO

—

VEB = 6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—



260

110

355

IC = 100mA, IB = 5mA

IC =500mA, IB = 50mA

IC =1A, IB = 100mA

IC =5A, IB = 500mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

1,250

IC =5A, IB = 500mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

1,100

IC = 5A, VCE = 5V

DC Current Gain (Note 9)

hFE

100

—

200

—

300

—

IC = 10mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 5A, VCE = 5V

IC = 10A, VCE = 5V

Current Gain-Bandwidth Product (Note 9)

—

MHz

VCE = 10V, IC = 100mA

f = 50MHz

Output Capacitance

COBO

—

VCB = 10V, f = 1MHz

Switching Times

tON

tOFF

—



2,130

—



IC = 1A, VCC = 50V

IB1 = -IB2 = 100mA

Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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