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LP28601 データシート(PDF) 3 Page - Lowpower Semiconductor inc |
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LP28601 データシート(HTML) 3 Page - Lowpower Semiconductor inc |
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3 / 12 page  LP28601-02 Mar.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 12 Preliminary Datasheet LP28601 Typical Application Circuit VDC VBUS OTG STAT VDDP VBAT NTC FULL LP28601 CIN 10uF RLIMIT Battery LPM9006B3F Low side NMOS System load COUT 22uF High side NMOS LPM9006B3F CBAT 10uF VSYS VDDA RISET RIREF CCOM SYSSEL VB Boost CIN2 10uF VBUS D- D+ D GND MICRO USB REG CONTROL CVDDP 4.7uF CVDDA 1uF 2K 2K LED1 LED2 R1 R2 0.1Ω 22Ω BST VDDP CBST GNDP L 4.7uH Absolute Maximum Ratings Note 1 Input and VOUT to GND(VDC,VBUS) ------------------------------------------------------------------ -0.3V to 18V Other Pin to GND -------------------------------------------------------------------------------------------- -0.3V to 6.5V LX voltage to GND ------------------------------------------------------------------------------------------- -0.3V to 18V HDR,BST voltage to GND ---------------------------------------------------------------------------------- -0.3V to 23V BST referred to LX ------------------------------------------------------------------------------------------ -0.3V to 6.5V BAT Short-circuit Duration ----------------------------------------------------------------------------------- Continuous Maximum Junction Temperature ---------------------------------------------------------------------------------- 150°C Storage Temperature ------------------------------------------------------------------------------------- -45℃ to 165℃ Operating Ambient Temperature Range (TA) -------------------------------------------------------- -40℃ to 85°C Maximum Soldering Temperature (at leads, 10 sec) -------------------------------------------------------- 260°C Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Information Maximum Power Dissipation (QFN-28, PD, TA=25℃) ---------------------------------------------------------- 2W Thermal Resistance (QFN-28, θJA) ---------------------------------------------------------------------------- 50℃/W ESD Susceptibility HBM(Human Body Mode) --------------------------------------------------------------------------------------------- 2KV MM(Machine Mode) --------------------------------------------------------------------------------------------------- 200V |
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