High Conductance

DO-35 Diodes

1N4150

Absolute Maximum Ratings

Symbol

Value

Unit

Average Forward Rectified Current at T

I

AV

0.65

Amp

Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)

I

FSM

2.0

Amps

Junction Temperature Range

T

j

-65 to +200

Storage Temperature Range

T

S

-55 to +200

Max. Average Power Dissipation

Pdiss

250

mW

Peak

Maximum

Maximum

Maximum Leakage

Minimum

Inverse Voltage

Average Rectified

Forward Voltage

Current

Saturation

(MIN.)

Current

Drop

(I

Voltage

(PIV)

(I

150

(@0.1 mA)

Type

Volts

Amps

Volts

µA

µA

Volts

1N482B

30

0.2

1.0

0.025

5

40

1N483B

60

0.2

1.0

0.025

5

80

1N484B

125

0.2

1.0

0.025

5

150

1N485B

175

0.2

1.0

0.025

5

200

1N486B

225

0.2

1.0

0.025

5

250

Features

Humidity proof glass

Thermally matched system

No thermal fatigue

No applications restrictions

Sigma Bond™ plated contacts

100% guaranteed solderability

Problem free assembly

Six Sigma quality

LL-35 MiniMELF types available

LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..

Use Advantages

Used as a general purpose diode in power supplies, or in clipping and steering

applications. Operation at temperatures up to 200 degrees C, no derating.

Can be used in harsh environments where hermeticity and low cost are

important. Compatible with all major automatic pick and place mounting

equipment. May be used on ceramic boards along with high temperature IR

solder reflow.

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

D O -35 G lass P ack age

Dia.

0.06-0.09"

1.0"

25.4 m m

(M in.)

Leng th

0.120-.200"

3.05-5.08-

mm

1.53-2.28 mm

0.018-0.022"

0.458-0.558 mm

Lead Dia.

1N482B

thru

1N486B