0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,

Low Noise Amplifier

Data Sheet

HMC8410

Rev. A

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FEATURES

Low noise figure: 1.1 dB typical

High gain: 19.5 dB typical

High output third-order intercept (IP3): 33 dBm typical

6-lead, 2 mm × 2 mm LFCSP package

APPLICATIONS

Software defined radios

Electronics warfare

Radar applications

FUNCTIONAL BLOCK DIAGRAM

HMC8410

Figure 1.

GENERAL DESCRIPTION

The HMC8410 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise wideband

amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410

provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,

and a typical output IP3 of 33 dBm, requiring only 65 mA from

22.5 dBm enables the low noise amplifier (LNA) to function as a

local oscillator (LO) driver for many of Analog Devices, Inc.,

balanced, I/Q or image rejection mixers.

The HMC8410 also features inputs/outputs (I/Os) that are

internally matched to 50 Ω, making it ideal for surface-mounted

technology (SMT)-based, high capacity microwave radio

applications.

The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm,

LFCSP package.

Multifunction pin names may be referenced by their relevant

function only.