AOB20C60PL datasheet(2/6 Pages) AOSMD

2 / 6 page

Symbol

Min

Typ

Max

Units

600

700

BVDSS

/∆TJ

0.54

IGSS

±100

VGS(th)

Gate Threshold Voltage

3.8

RDS(ON)

0.225

0.26

Ω

gFS

VSD

0.7

ISM

Ciss

3607

Coss

140

Co(er)

Co(tr)

182

Crss

3.3

Ω

Qgs

µA

VDS=480V, TJ=125°C

Maximum Body-Diode Pulsed Current

Effective output capacitance, energy

Effective output capacitance, time

VGS=0V, VDS=100V, f=1MHz

VGS=0V, VDS=0 to 480V, f=1MHz

VDS=0V, VGS=±30V

Gate-Body leakage current

VGS=10V, VDS=480V, ID=20A

Total Gate Charge

Gate Source Charge

SWITCHING PARAMETERS

ID=250µA, VGS=0V, TJ=150°C

Breakdown Voltage Temperature

Coefficient

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=600V, VGS=0V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Gate resistance

f=1MHz

Static Drain-Source On-Resistance

BVDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

Reverse Transfer Capacitance

VDS=5V, ID=250µA

Output Capacitance

Forward Transconductance

IS=1A,VGS=0V

VDS=40V, ID=10A

VGS=10V, ID=10A

VGS=0V, VDS=100V, f=1MHz

Maximum Body-Diode Continuous Current

Input Capacitance

Diode Forward Voltage

DYNAMIC PARAMETERS

Qgd

tD(on)

tD(off)

120

trr

599

Qrr

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=20A,dI/dt=100A/µs,VDS=100V

Turn-Off DelayTime

Turn-Off Fall Time

VGS=10V, VDS=300V, ID=20A,

RG=25Ω

IF=20A,dI/dt=100A/µs,VDS=100V

Turn-On Rise Time

Turn-On DelayTime

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. L=60mH, I

AS=7.3A, VDD=150V, RG=25Ω, Starting TJ=25°C.

H. C

o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.

I. C

o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.

Rev.2.0: January 2015

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