MCC162-12io1

0

25

50

75

100

125

150

T

T

t [ms]

t [s]

0.001

0.01

0.1

1

0

1000

2000

3000

4000

5000

0

1

1

0

25

50

75

100 125 150

0

40

80

120

160

200

240

280

320

I

TSM

[A]

I

TAVM

[A]

0

50

100 150 200 250

0

40

80

120

160

200

240

280

320

360

400

P

tot

[W]

I

0

25

50

75

100

125

150

0

100

200

300

400

500

0

200

400

600

800

1000

1200

1400

I

[A

T

R

0.3

0.4

0.5

0.6

0.8

1.0

1.4

1.8

P

tot

[W]

I

dAVM

[A]

T

Fig. 1 Surge overload current I

I

Fig. 2 I

Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

Fig. 7 Gate trigger delay time

180° sin

120°

60°

30°

DC

R

0.2

0.08

0.1

0.15

0.04

0.06

0.03

0.3

0.01

0.1

1

10

0.1

1

10

100

0.01

0.1

1

10

0.1

1

10

100

I

V

G

[V]

I

T

t

gd

[μs]

limit

typ.

t

30 µs

60 W

I

GD

50 Hz

80% V

RRM

T

45°C

T

T

180° sin

120°

60°

30°

DC

B6

Circuit

3xMCC162 or

3x MCD162

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20160408b

Data according to IEC 60747and per semiconductor unless otherwise specified

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