MMRF1007H datasheet(3/17 Pages) NXP

部品番号	MMRF1007H

部品情報	RF Power Field Effect Transistors

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メーカー	NXP [NXP Semiconductors]

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MMRF1007HR5 MMRF1007HSR5

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak

(100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle

Power Gain

Gps

—

19.8

—

Drain Efficiency

D

—

59.0

—

Burst Droop

BDrp

—

0.21

—

Typical Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak

(100 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

—

21.4

—

Drain Efficiency

D

—

56.3

—

Input Return Loss

IRL

—

--25.3

—

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