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MSB15MH データシート(PDF) 2 Page - Diodes Incorporated |
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MSB15MH データシート(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() MSB15MH Document number: DS38864 Rev. 3 - 2 2 of 5 www.diodes.com November 2016 © Diodes Incorporated MSB15MH Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 1,000 V RMS Reverse Voltage VR(RMS) 700 V Average Rectified Output Current @ TC = +110°C IO 1.5 A Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 70 A Non-Repetitive Peak Forward Surge Current, 1.0ms Single Half Sine-Wave Superimposed on Rated Load IFSM 140 A I 2 t Rating for Fusing (1ms < t < 8.3ms) I 2t 20.33 A 2S Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) RθJA 50 °C/W Typical Thermal Resistance, Junction to Case RθJC 10 °C/W Typical Thermal Resistance, Junction to Lead RθJL 15 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 1,000 — — V IR = 5μA Forward Voltage VF — — — — — 0.77 — 0.94 1.02 — 1.1 — V IF = 0.75A, TA = +25°C IF = 0.75A, TA = +125°C IF = 1.5A, TA = +25°C IF = 1.5A, TA = +125°C Leakage Current (Note 6) IR — — — — 5 500 μA VR = 1000V, TA = +25°C VR = 1000V, TA = +125°C Total Capacitance (Note 7) CT — 25 — pF VR = 4V, f = 1.0MHz Notes: 5. Device mounted on glass-epoxy substrate with 1oz 20mm x 20mm Cu pad per pin. 6. Short duration pulse test used to minimize self-heating effect. 7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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