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PDMB150W6 データシート(PDF) 4 Page - Kyocera Kinseki Corpotation |
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PDMB150W6 データシート(HTML) 4 Page - Kyocera Kinseki Corpotation |
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4 / 4 page ![]() 0 25 50 75 100 125 150 0 2 4 6 8 Collector Current IC (A) Fig.7- Collector Current vs. Switching Loss (Typical) EOFF EON VCC=300V RG=5.1 VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 3 10 30 100 0.1 0.3 1 3 10 30 100 300 Series Gate Impedance RG ( ) Fig.8- Series Gate Impedance vs. Switching Loss (Typical) EOFF EON VCC=300V IC=150A VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 01 23 4 0 50 100 150 200 250 300 Forward Voltage VF (V) Fig.9- Forward Characteristics of Free Wheeling Diode (Typical) Tj=25°C Tj=125°C Tj=150°C 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100 200 300 Forward Current IF (A) Fig.10- FWD Reverse Recovery Characteristics (Typical) IRrM trr VCC=300V, VGE=±15V, RG=5.1 Tj=125°C Tj=150°C 0 200 400 600 800 0.1 0.3 1 3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V) Reverse Voltage VR (V) Fig.11- Reverse Bias Safe Operating Area RG=5.1 , VGE=±15V, Tj<150°C (Chip level) IGBT FWD 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 3 Time t (s) Fig.12- Transient Thermal Impedance TC=25°C 1 Shot Pulse FWD IGBT |
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