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M48T58 データシート(PDF) 20 Page - STMicroelectronics

部品番号 M48T58
部品情報  5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM
PDF  27 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T58 データシート(HTML) 20 Page - STMicroelectronics

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Figure 13. Clock Calibration
VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting inspikes onthe VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass ca-
pacitor value of 0.1µF (as shown in Figure 14) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from VCC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 14. Supply Voltage Protection
AI00594B
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI02169
VCC
0.1
µF
DEVICE
VCC
VSS



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