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NCP4545IMNTWG データシート(PDF) 2 Page - ON Semiconductor |
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NCP4545IMNTWG データシート(HTML) 2 Page - ON Semiconductor |
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2 / 11 page ![]() NCP4545 www.onsemi.com 2 PIN DESCRIPTION Pin Name Function 1 DELAY Turn−on delay adjustment 2 VCC Supply voltage to controller (3.0 V − 5.5 V) 3 GND Controller ground 4, 5, 9−14, 18, 19 VIN Drain of MOSFET (0.5 V − 6.0 V) 6−8 VOUT Source of MOSFET connected to load 15 BLEED Load bleed connection 16 EN NCP4545IMNTWG − Active−High digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP4545IMNTWG−L − Active−Low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC 17 SR Slew rate adjustment ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range VCC −0.3 to 6 V Input Voltage Range VIN −0.3 to 6 V Output Voltage Range VOUT −0.3 to 6 V EN Digital Input Range VEN −0.3 to (VCC + 0.3) V Thermal Resistance, Junction−to−Air (Note 1) RqJA 49.9 °C/W Thermal Resistance, Junction−to−Air (Note 2) RqJA 32.8 °C/W Thermal Resistance, Junction−to−Case (VIN Paddle) RqJC 3.3 °C/W Continuous MOSFET Current (Note 3) IMAX 10.5 A Total Power Dissipation @ TA = 25°C (Notes 1 and 4) Derate above TA = 25°C PD 1.30 20.1 W mW/ °C Total Power Dissipation @ TA = 25°C (Notes 2 and 4) Derate above TA = 25°C PD 1.98 30.5 W mW/ °C Storage Temperature Range TSTG −40 to 150 °C Lead Temperature, Soldering (10 sec.) TSLD 260 °C ESD Capability, Human Body Model (Notes 5 and 6) ESDHBM 4.0 kV ESD Capability, Machine Model (Note 5) ESDMM 200 V ESD Capability, Charged Device Model (Note 5) ESDCDM 1 kV Latch−up Current Immunity (Note 5) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 3. Current limited by package. 4. Specified for derating purposes only, ensure that IMAX is never exceeded. 5. Tested by the following methods @ TA = 25°C: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per EIA/JESD22−A115 ESD Charged Device Model per EIA/JESD22−C101 Latch−up Current Maximum Rating: ≤100 mA per JEDEC standard: JESD78 6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance for VIN and VOUT should be expected and these devices should be treated as ESD sensitive. |
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