AFIC901N

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Wideband Integrated

Power Amplifier

The AFIC901N is a 2--stage, high gain amplifier designed to provide a high

level of flexibility to the amplifier designer. The device is unmatched even at the

interstage, allowing performance to be optimized for any frequency in the 1.8 to

1000 MHz range. The high gain, ruggedness and wideband performance of this

device make it ideal for use as a pre--driver and driver in a wide range of

industrial, medical and communications applications.

Frequency

(MHz)

(dB)

(%)

(dBm)

32.2

73.0

31.2

Frequency

(MHz)

(dBm)

(dB)

(%)

(dBm)

0

30.6

62.1

30.6

3

27.4

61.5

30.4

3

27.6

57.0

30.6

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

Pin

(W)

Test

Voltage

Result

CW

> 25:1 at all

Phase Angles

3dB

Overdrive

from rated

power

9

No Device

Degradation

1. Measured in 520 MHz narrowband test circuit.

2. Measured in 136–174 MHz VHF broadband reference circuit.

3. Measured in 350–520 MHz UHF broadband reference circuit.

4. Measured in 760–870 MHz broadband reference circuit.

5. The values shown are the center band performance numbers across the indicated

frequency range.

Features

 Characterized for Operation from 1.8 to 1000 MHz

 Unmatched Input, Interstage and Output Allowing Wide Frequency Range

Utilization

 Integrated ESD Protection

 Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and

760–870 MHz Designs.

 24--pin, 4 mm QFN Plastic Package

Typical Applications

 Driver for Mobile Radio Power Amplifiers

 Output Stage for Low Power Handheld Radios

 Driver for Communications and Industrial Systems

Document Number: AFIC901N

Rev. 0, 1/2016

Freescale Semiconductor

Technical Data

1.8–1000 MHz, 30 dBm, 7.5 V

AIRFAST RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

AFIC901N

QFN 4  4

Figure 1. Pin Connections

Note: Exposed backside of the package is the

source terminal for the transistors.

External

Interstage Match

Figure 2. Typical Application

GND

GND

24 23

1

2

3

4

5

6

GND

N.C.

Drain B

GND

N.C.

Gate B

Drain B

Drain B

Gate B

Gate B

22 21 20 19

7 8 9 10 11 12

18

17

16

15

14

13

Stage 1

Stage 2

Stage 2

Stage 1

 Freescale Semiconductor, Inc., 2016. All rights reserved.