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AFV121KGS データシート(PDF) 7 Page - NXP Semiconductors |
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AFV121KGS データシート(HTML) 7 Page - NXP Semiconductors |
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7 / 20 page  AFV121KH AFV121KHS AFV121KGS 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 960–1215 MHz REFERENCE CIRCUIT 1300 900 IRL Gps f, FREQUENCY (MHz) Figure 6. Power Gain, Drain Efficiency and IRL versus Frequency at a Constant Input Power 1150 1100 1050 1000 950 19 18 --11 60 50 –4 --6 D 16.5 16 13.5 12.5 18.5 17.5 17 40 15.5 15 1200 1250 VDD =50 Vdc,Pin =25 W,IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% 55 45 35 --5 --7 14 14.5 13 --9 --8 --10 10 24 20 70 Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain and Drain Efficiency versus Output Power VDD =50 Vdc, IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% 800 0 22 18 16 14 60 50 40 30 Gps D 200 400 600 1000 1030 MHz 960 MHz 1215 MHz 1030 MHz 960 MHz 1215 MHz 20 12 10 0 1200 1400 1600 1800 1090 MHz 1090 MHz 250 1500 900 20 950 1250 1000 60 50 f, FREQUENCY (MHz) 1000 500 750 70 40 30 1050 1100 1150 1200 1250 1300 D Pout VDD =50 Vdc,IDQ(A+B) = 100 mA, Pin =25 W Pulse Width = 128 sec, Duty Cycle = 10% Figure 8. Output Power and Drain Efficiency versus Frequency at a Constant Input Power |
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