MDF4N65B datasheet(1/6 Pages) MGCHIP

部品番号	MDF4N65B

部品情報	N-Channel MOSFET 650V, 4.0A, 2.2ohm

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メーカー	MGCHIP [MagnaChip Semiconductor.]

ホームページ	http://www.magnachip.co.kr

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1 / 6 page

Jul. 2012 Version 1.2

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25

oC

ID

4.0*

A

TC=100

oC

2.6*

A

Pulsed Drain Current

(1)

IDM

16*

A

Power Dissipation

TC=25

oC

PD

35

W

Derate above 25

oC

0.28

W/

oC

Repetitive Avalanche Energy

(1)

EAR

3.5

mJ

Peak Diode Recovery dv/dt

(3)

dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

170

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

* Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

(1)

RθJC

3.55

MDF4N65B

N-Channel MOSFET 650V, 4.0A, 2.2

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 650V

ID = 4.0A

@ VGS = 10V

RDS(ON) ≤ 2.2

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

D

G

S

TO-220F

MDF Series

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