DLA40IM800PC

V

=

V

A²s

A²s

A²s

A²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.30

R

0.8 K/W

R

min.

40

V

10

T

= 25°C

VJ

T

=

°C

VJ

mA

0.05

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

120

P

tot

185

W

T

= 25°C

C

R

K/W

40

800

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

1.56

T

= 25°C

VJ

150

V

F0

V

0.85

T

=

°C

VJ

175

10

mΩ

V

1.26

T

=

°C

VJ

I =

A

F

V

40

1.65

I =

A

F

80

I =

A

F

80

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

800

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

10

junction capacitance

V =

V

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

175

300

325

325

315

A

A

A

A

255

275

450

440

800

FAV

rectangular

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

900

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20130116a

Data according to IEC 60747and per semiconductor unless otherwise specified

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