ICS8545BGLF datasheet(4/15 Pages) IDT

4 / 15 page

2016© Integrated Device Technology, Inc.

Revision E, January 5, 2016

8545 Datasheet

Absolute Maximum Ratings

NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond

those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect product reliability.

DC Electrical Characteristics

Table 4A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, TA = 0°C to 70°C

Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = 0°C to 70°C

Item

Rating

Supply Voltage, VDD

4.6V

Inputs, VI

-0.5V to VDD + 0.5V

Outputs, IO

Continuous Current

Surge Current

10mA

15mA

Package Thermal Impedance, JA

73.2C/W (0 lfpm)

Storage Temperature, TSTG

-65C to 150C

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

VDD

Positive Supply Voltage

3.135

3.3

3.465

IDD

Power Supply Current

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

VIH

Input High Voltage

VDD + 0.3

VIL

Input Low

Voltage

CLK1, CLK2

-0.3

1.3

OE, CLK_EN, CLK_SEL

-0.3

0.8

IIH

Input

High Current

CLK1, CLK2, CLK_SEL

VDD = VIN = 3.465V

150

µA

OE, CLK_EN

VDD = VIN = 3.465V

µA

IIL

Input

Low Current

CLK1, CLK2, CLK_SEL

VDD = 3.465V, VIN = 0V

-5

µA

OE, CLK_EN

VDD = 3.465V, VIN = 0V

-150

µA

ICS8545BGLF データシート(PDF) 4 Page - Integrated Device Technology

ICS8545BGLF データシート(HTML) 4 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

データシートダウンロード