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FUSB340 データシート(PDF) 4 Page - ON Semiconductor

部品番号 FUSB340
部品情報  USB 3.1 SuperSpeed 10 Gbps Switch
PDF  8 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FUSB340 データシート(HTML) 4 Page - ON Semiconductor

  FUSB340 Datasheet HTML 1Page - ON Semiconductor FUSB340 Datasheet HTML 2Page - ON Semiconductor FUSB340 Datasheet HTML 3Page - ON Semiconductor FUSB340 Datasheet HTML 4Page - ON Semiconductor FUSB340 Datasheet HTML 5Page - ON Semiconductor FUSB340 Datasheet HTML 6Page - ON Semiconductor FUSB340 Datasheet HTML 7Page - ON Semiconductor FUSB340 Datasheet HTML 8Page - ON Semiconductor  
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© 2015 Semiconductor Components Industries, LLC.
www.fairchildsemi.com
FUSB340 • Rev. 2
4
www.onsemi.com
DC and Transient Characteristics
All typical values are at TA=25°C unless otherwise specified.
Symbol
Parameter
Condition
VDD
(V)
TA= -40ºC to +85ºC
Unit
Min.
Typ.
Max.
VIK
Clamp Diode Voltage S, /OE
IIN=-18 mA
1.5
-1.2
-0.6
V
IIK
Clamp Diode Current (Switch
Pins)
VIN=-0.3 V
0
18
µA
VIH
Control Input Voltage High
S, /OE
1.5
1.30
V
S, /OE
3.6
1.4
V
S, /OE
5.0
1.5
V
VIL
Control Input Voltage Low
S, /OE
1.5
0.4
V
S, /OE
3.6
0.4
V
S, /OE
5.0
0.4
V
IIN
Control Input Leakage
VSW= -0.6 to 2.0 V
VCNTRL=0 to VDD
5.0
-500
500
nA
IOZ
Off-State Leakage for Open
Data Paths
VSW= 0.0
DATA 2.0 V
5.0
-0.5
0.5
µA
ICL
On-State Leakage for Closed
Data Paths(4)
VSW= 0.0
DATA 2.0 V
5.0
-0.5
0.5
µA
IOFF
Power-Off Leakage Current
(All I/O Ports)
VSW= 0 V or 2.0 V
0
-500
500
nA
RON
Switch On Resistance
VSW= 0 V, ION=-8 mA
1.5
5.4
8.0

RON
Difference in RON Between
Positive-Negative
VSW= 0 V, ION=-8 mA
1.5
0.1

RONF
Flatness for RON
VSW= 0
DATA 2.0 V,
ION=-8 mA
1.5
0.9

ICC
Quiescent Supply Current
V/OE=0, VSEL=0 or VDD,
IOUT=0
5.0
12
30
µA
ICCZ
Quiescent Supply Current
(High Impedance)
VSEL=X, V/OE=VDD,
IOUT=0
5.0
1
µA
ICCT
Increase in Quiescent Supply
Current per VCNTRL
VSEL or V/OE=1.5 V
5.0
5
15
µA
Note:
4.
For this test, the data switch is closed with the respective switch pin floating.



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