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FSUSB42 データシート(PDF) 4 Page - ON Semiconductor |
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FSUSB42 データシート(HTML) 4 Page - ON Semiconductor |
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4 / 10 page ![]() www.onsemi.com 4 DC Electrical Characteristics All typical value are at TA=25°C unless otherw ise specified. Symbol Parameter Condition VCC (V) TA=- 40°C to +85°C Unit Min. Typ. Max. VIK Clamp Diode Voltage IIN=-18mA 3.0 -1.2 V VIH Input Voltage High 2.4 to 3.6 1.3 V 4.3 1.7 VIL Input Voltage Low 2.4 to 3.6 0.5 V 4.3 0.7 IIN Control Input Leakage VSW=0 to VCC 0 to 4.3 -1 1 µA IOZ Off State Leakage 0 Dn, HSD1n, HSD2n 3.6 V 4.3 -2 2 µA IOFF Pow er-Off Leakage Current (All I/O Ports) VSW=0 V to 4.3 V, VCC=0 V Figure 5 0 -2 2 µA RON HS Sw itch On Resistance (6) VSW=0.4 V, ION=-8 mA Figure 4 2.4 4.5 7.5 3.0 3.9 6.5 ∆RON HS Delta RON (7) VSW=0.4 V, ION=-8 mA 3.0 0.65 ICC Quiescent Supply Current VCNTRL=0 or VCC, IOUT=0 4.3 1 µA ICCT Increase in ICC Current per Control Voltage and VCC VCNTRL=2.6 V, VCC=4.3 V 4.3 10 µA VCNTRL=1.8 V, VCC=4.3 V 4.3 15 µA Notes: 6. Measured by the voltage drop betw een HSDn and Dn pins at the indicated current through the sw itch. On resistance is determined by the low er of the voltage on the tw o (HSDn or Dn ports). 7. Guaranteed by characterization. |
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