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STPS20H100CT データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STPS20H100CT データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 High Voltage Power Schottky Rectifier STPS20H100CT FEATURES · Plastic material used carriers Underwriter Laboratory · Metal silicon junction, majority carrier conduction · Low Power Loss,high Efficiency · Guard ring for overvoltage protection · High Surge Capability,High Current Capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(RMS) RMS Forward current 30 A IF(AV) Average Rectified Forward Current Tc=160℃ per diode per device 10 20 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions tp=10 ms sinusoidal 250 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10000 V/μs |
同様の部品番号 - STPS20H100CT |
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同様の説明 - STPS20H100CT |
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