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4N80 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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4N80 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 4N80 DESCRIPTION · Drain Current ID= 4A@ TC=25℃ · Drain Source Voltage- : VDSS= 800V(Min) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 15.6 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
同様の部品番号 - 4N80 |
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同様の説明 - 4N80 |
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