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ISCD1835P データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 ISCD1835P
部品情報  isc Silicon PNP Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCD1835P データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCD1835P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCD1835P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
1
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ISCD1835P
DESCRIPTION
·
Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
·
Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50mA
·
DPAK for Surface Mount Applications
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-0.75
A
PC
Collector Power Dissipation
TC=25℃
15
W
Collector Power Dissipation
Ta=25℃
1.56
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.33
℃
/W


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