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MBR10200CD データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR10200CD データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR10200CD FEATURES · Low Power Loss/High Efficiency · High current capability,low forward voltage drop · High surge capability · Guardring for overvoltage protection · High temperature soldering guaranteed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low-voltage,high frequency inverters,free wheeling and polarity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 125℃ 10 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 120 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
同様の部品番号 - MBR10200CD |
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同様の説明 - MBR10200CD |
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