TIPL760C datasheet(1/2 Pages) ISC

部品番号	TIPL760C

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

TIPL760C

FEATURES

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 550V(Min.)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

Rugged Triple-duffused planar construction

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

550

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

4

A

ICM

Peak collector current

8

A

PC

Collector Power Dissipation

@TC=25℃

75

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

同様の部品番号 - TIPL760C

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