MHT2012N datasheet(3/14 Pages) NXP

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MHT2012N

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

500

nAdc

Gate--Source Leakage Current

(VGS =0.9 Vdc, VDS =0 Vdc)

IGSS

—

200

nAdc

Stage 2 -- On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =14 Adc)

VGS(th)

0.8

1.2

1.6

Vdc

Fixture Gate Quiescent Voltage (1)

(VDS =28 Vdc, IDQ2 =72 mAdc)

VGG(Q)

—

4.8

—

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID = 140 mAdc)

VDS(on)

0.05

0.14

0.20

Vdc

Table 6. Typical Performance

In NXP Reference Circuit, 50 ohm system, VDD =28 Vdc, IDQ1 =15 mA, IDQ2 = 75 mA, 2400–2500 MHz Bandwidth

Power Gain

Gps

—

29.7

—

Power Added Efficiency

PAE

—

50.5

—

Pout @ 1 dB Compression Point, CW

P1dB

—

11.7

—

Pout @ 3 dB Compression Point, CW

P3dB

—

Gain Variation over Temperature

(–30Cto+85C)

G

—

0.036

—

dB/C

Output Power Variation over Temperature

(–30Cto+85C)

P1dB

—

0.004

—

dB/C

Table 7. Load Mismatch/Ruggedness

In NXP Reference Circuit, 50 ohm system, IDQ1 =12 mA, IDQ2 =72 mA

Frequency

(MHz)

Signal Type

VSWR

(dBm)

Test Voltage, VDD

Result

2450

10:1 at all

Phase Angles

(3 dB Overdrive)

No Device Degradation

Table 8. Ordering Information

Device

Tape and Reel Information

Package

MHT2012NT1

T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel

PQFN 8  8

1. Data measured in NXP test fixture with 4.7 k resistor in series with VGS1 and VGS2 pins.

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