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UCS16002SL-S08-R データシート(PDF) 3 Page - Unisonic Technologies |
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UCS16002SL-S08-R データシート(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() UCS16002S Preliminary LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R103-126.c ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 32 V Input Voltage to FB Pin VFB -0.3 ~ 6.5 V Input Voltage to CS Pin VCS -0.3 ~ 6.5 V Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +125 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. OPERATING RANGE PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 10 ~ 24 V VCC-G Pin Series Resistor VCC_GR 51 ~ 510 Ω Open Frame Output Power for 85~264VAC PO_MAX 6 W ELECTRICAL CHARACTERISTICS (TA=25°C, VCC=15V, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SUPPLY SECTION Start Up Current IST VCC=VTHD(ON)-1V 2 15 μA Supply Current with Switch IOP VFB=3.5V 2.2 3.5 mA VDD Zener Clamp Current vCLAMP IVDD=20mA 29 30 32 V UNDER-VOLTAGE LOCKOUT SECTION Start Threshold Voltage VTHD(ON) 18 20 22 V Min. Operating Voltage VCC(MIN) 6.5 8 9.5 V CONTROL SECTION Feedback Source Current IFB VFB=0 240 μA VFB Open Loop Voltage Level VFB_Open 5.4 V Burst-Mode Out FB Voltage VFB(OUT) VCS =0 1.8 V Burst-Mode Enter FB Voltage VFB(IN) VCS =0 1.6 V Normal Initial VFB=3.5V 60 65 70 kHz Switching Frequency Burst Mode Base Frequency F(SW) 20 kHz Duty Cycle DMAX VFB=3.5V, VCS=0 70 80 90 % Frequency Hopping FJ(SW) -9 +9 % Frequency Variation VS VCC Deviation FDV VCC=10~20V 10 % Frequency Variation VS Temperature Deviation FDT T=-40 ~ 110°C 10 % Soft-Start Time TSOFTS 5 ms PROTECTION SECTION OVP Threshold VOVP VFB=3.5V 25 27 28 V OLP Threshold VFB(OLP) VCS=0 4.2 V Delay Time Of OLP TD-OLP 60 88 120 ms OTP Threshold T(THR) 140 °C CURRENT LIMITING SECTION Leading Edge Blanking Time tLEB 200 350 550 nS Peak Current Limitation VSENSE_H VFB=3.9V 0.92 V Threshold Voltage For Valley VSENSE_L VFB=3.9V 0.73 0.79 0.85 V POWER MOS-TRANSISTOR SECTION Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250μA 600 V Drain-Source Diode Continuous Source Current IS 0.35 A Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.2A 18 Ω Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. |
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