2SC4783 datasheet(1/4 Pages) NEC

部品番号	2SC4783

部品情報	NPN SILICON EPITAXIAL TRANSISTOR

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©

2001

NPN SILICON EPITAXIAL TRANSISTOR

2SC4783

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No.

D15616EJ1V0DS00 (1st edition)

Date Published

July 2001 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SC4783 is NPN silicon epitaxial transistor.

FEATURES

• High DC current gain: hFE2 = 200 TYP.

• High voltage: VCEO = 50 V

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC(DC)

100

mA

Collector Current (pulse)

Note1

IC(pulse)

200

mA

Total Power Dissipation (TA = 25°C)

Note2

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

–55 to + 150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 3.0 cm

2 x 0.64 mm

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 60 V, IE = 0

100

nA

Emitter Cut-off Current

IEBO

VEB = 5.0 V, IC = 0

100

nA

DC Current Gain

Note

hFE1

VCE = 6.0 V, IC = 0.1 mA

50

−

hFE2

VCE = 6.0 V, IC = 1.0 mA

90

200

600

−

Base to Emitter Voltage

Note

VBE

VCE = 6.0 V, IC = 1.0 mA

0.62

V

Collector Saturation Voltage

Note

VCE(sat)

IC = 100 mA, IB = 10 mA

0.15

0.3

V

Base Saturation Voltage

Note

VBE(sat)

IC = 100 mA, IB = 10 mA

0.86

1.0

V

Gain Bandwidth Product

fT

VCE = 6.0 V, IE =

−10 mA

150

250

MHz

Output Capacitance

Cob

VCE = 6.0 V, IE = 0, f = 1.0 MHz

3.0

4.0

pF

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

hFE CLASSFICATION

Marking

L4

L5L6L7

hFE2

90 to 180

135 to 270

200 to 400

300 to 600

PACKAGE DRAWING (Unit: mm)

0.3 ± 0.05

2

0.2

+0.1

–0

0.5

1: Emitter

2: Base

3: Collector

0.5

1.0

1.6 ± 0.1

3

1

0.6

0.75 ± 0.05

0 to 0.1

0.1

+0.1

–0.05

同様の部品番号 - 2SC4783

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SC4783	256Kb / 7P	NPN SILICON EPITAXIAL TRANSISTOR 2001
Renesas Technology Corp	2SC4783	257Kb / 7P	NPN SILICON EPITAXIAL TRANSISTOR

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