APT80GP60B2 datasheet(1/6 Pages) ADPOW

部品番号	APT80GP60B2

部品情報	POWER MOS 7 IGBT

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メーカー	ADPOW [Advanced Power Technology]

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APT80GP60B2

600V

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

STATIC ELECTRICAL CHARACTERISTICS

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

• Low Conduction Loss

• 200 kHz operation @ 400V, 45A

• Low Gate Charge

• 100 kHz operation @ 400V, 72A

• Ultrafast Tail Current shutoff

• SSOA rated

POWER MOS 7

® IGBT

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

1.0

5

±100

Symbol

BVCES

VGE(TH)

VCE(ON)

ICES

IGES

UNIT

Volts

mA

nA

Symbol

VCES

VGE

VGEM

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT80GP60B2

600

±20

±30

100

330

330A @ 600V

1041

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current

7 @ T

C = 25°C

Continuous Collector Current

7 @ T

C = 110°C

Pulsed Collector Current 1 @ TC = 25°C

Switching Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)

Gate Threshold Voltage

(VCE = VGE, IC = 2.5mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 125°C)

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)

2

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)

2

Gate-Emitter Leakage Current (VGE = ±20V)

T-Max

TM

G

C

E

G

C

E

同様の部品番号 - APT80GP60B2

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