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2N5202 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 2N5202
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5202 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N5202
DESCRIPTION
·
Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min)
·
High saturation voltage
·
Wide area of safe operation
APPLICATIONS
·
Designed for use in high-current, high-speed switching
circuits such as:low-distortion power amplifiers,oscillators,
switching regulators, series regulators, converters, and
inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5.0
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO(SUS)
Collector-Emitter Voltage
50
V
VCER(SUS)
Collector-Emitter Voltage RBE= 50Ω
75
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
2
A
PD
Total Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
-65~200
℃
Tstg
Storage Temperature
-65~235
℃


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