| データシートサーチシステム |
|
ACE4600M データシート(PDF) 1 Page - ACE Technology Co., LTD. |
|
|
|||||||||||||||||||||||||||||
ACE4600M データシート(HTML) 1 Page - ACE Technology Co., LTD. |
|
1 / 6 page ![]() ACE4600M N-Channel 60-V (D-S) MOSFET VER 1.1 1 Description The ACE4600M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±12 V Continuous Drain Current a TA=25 OC ID 15 A TA=70 OC 11.6 Pulse Drain Current b IDM 50 Continuous Drain Current (Diode Continuous) a IS 7.3 A Power Dissipation a TA=25 OC PD 5 W TA=70 OC 3.2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 OC Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t≦10sec RθJA 25 ℃/W Steady State 65 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 60 16@ VGS = 4.5V 15 19@ VGS = 2.5V 13 |
同様の部品番号 - ACE4600M |
|
同様の説明 - ACE4600M |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |