ACE14201T datasheet(2/6 Pages) ACE

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ACE14201T

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE14201T XX + H

Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=-250µA

-20

Zero gate voltage drain current

IDSS

VDS=-20V, VGS=0V

-1

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=-250µA

-0.3

-0.6

Gate leakage current

IGSS

VGS=±12V, VDS=0V

±100

Drain-source on-state resistance

RDS(ON)

VGS=-4.5V, ID=-8A

6.5

mΩ

VGS=-2.5V, ID=-5A

VGS=-1.8V, ID=-3A

Forward trans conductance

gFS

VDS=-10V, ID=-5A

Diode forward voltage

VSD

ISD=-1A, VGS=0V

-1.2

Switching

Total gate charge

VGS=-4.5V, VDS=-10V, ID=-5A

44.4

Gate-source charge

Qgs

7.2

Gate-drain charge

Qgd

10.2

Turn-on delay time

td(on)

VGS=-10V,VDD=-15V,

ID=-1A,RGEN = 6

13.2

Turn-on rise time

Turn-off delay time

td(off)

160

Turn-off fall time

154

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=-15V, f=1.0MHz

4060

Output capacitance

Coss

520

Reverse transfer capacitance

Crss

400

FM: SOP-8

Pb - free

Halogen - free

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