IXFN210N30P3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

60

100

S

C

iss

16.2

nF

C

oss

V

2550

pF

C

rss

42

pF

R

Gi

Gate Input Resistance

1.0



t

d(on)

46

ns

t

r

25

ns

t

d(off)

94

ns

t

f

13

ns

Q

g(on)

268

nC

Q

gs

V

80

nC

Q

gd

72

nC

R

thJC

0.083

C/W

R

thCS

0.05

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

210

A

I

SM

Repetitive, Pulse Width Limited by T

JM

840

A

V

SD

I

1.5

V

t

rr

250 ns

Q

RM

4.1

C

I

RM

28

A

Resistive Switching Times

V

R

I

V

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Part must be heatsunk for high-temp I

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.