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IXTP55N075T データシート(PDF) 2 Page - IXYS Corporation

部品番号 IXTP55N075T
部品情報  N-Channel Enhancement Mode Avalanche Rated
PDF  5 Pages
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メーカー  IXYS [IXYS Corporation]
ホームページ  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP55N075T データシート(HTML) 2 Page - IXYS Corporation

  IXTP55N075T Datasheet HTML 1Page - IXYS Corporation IXTP55N075T Datasheet HTML 2Page - IXYS Corporation IXTP55N075T Datasheet HTML 3Page - IXYS Corporation IXTP55N075T Datasheet HTML 4Page - IXYS Corporation IXTP55N075T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP55N075T
IXTY55N075T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 0.5 ID25, Note 1
16
27
S
C
iss
1400
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
235
pF
C
rss
123
pF
t
d(on)
20
n s
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 10 A
50
n s
t
d(off)
R
G = 18 Ω (External)
44
n s
t
f
41
n s
Q
g(on)
33
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 10 A
10
nC
Q
gd
9nC
R
thJC
1.15
°C/W
R
thCS
TO-220
0.5
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic
Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
55
A
I
SM
Repetitive
150
A
V
SD
I
F = 25 A, VGS = 0 V, Note 1
1.2
V
t
rr
I
F = 25 A, -di/dt = 100 A/μs50
ns
V
R = 40 V, VGS = 0 V
Notes:
1. Pulse test: t
≤ 300 μs, duty cycle
d
≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be
5 mm or less from the package body.
TO-252 (IXTY) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38
0.086
0.094
A1
0.89 1.14
0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89
0.025
0.035
b1
0.76 1.14
0.030
0.045
b2
5.21 5.46
0.205
0.215
c
0.46 0.58
0.018
0.023
c1
0.46 0.58
0.018
0.023
D
5.97 6.22
0.235
0.245
D1
4.32 5.21
0.170
0.205
E
6.35 6.73
0.250
0.265
E1
4.32 5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51 1.02
0.020
0.040
L1
0.64 1.02
0.025
0.040
L2
0.89 1.27
0.035
0.050
L3
2.54 2.92
0.100
0.115
1 Anode
2 NC
3 Anode
4 Cathode
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-220 (IXTP) Outline
PRELIMINARYTECHNICAL
INFORMATION
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478B2
7,071,537



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