15 A Dual Low-Side RF MOSFET Driver

IXRFD615X2

1

Description

The IXRFD615X2 is a dual CMOS high-speed, high-current

gate driver specifically designed to drive MOSFETs in Push-

Pull and Class E Push-Pull HF RF applications as well as oth-

er applications requiring ultrafast rise and fall times or short

minimum pulse widths. The IXRFD615X2 can source and

sink 15 A of peak current per driver while producing voltage

rise and fall times of less than 10 ns and minimum pulse

widths of 8 ns. The inputs to the driver are compatible with

TTL or CMOS and are fully immune to latch up over the entire

operating range. Designed with small internal delays, cross

conduction or current shoot-through is virtually eliminated.

The features and wide safety margin in operating voltage and

power make the IXRFD615X2 unmatched in performance

and value.

The surface mount IXRFD615X2 is packaged in a low-

inductance RF package incorporating advanced layout tech-

niques to minimize stray lead inductances for optimum

switching performance. The two drivers are constructed on a

single substrate sharing a common ground via the substrate

and therefore are not capable of ground isolated operation

from each other. An example would be a half-bridge which

requires a high-side floating and a ground referenced driver,

which is not suitable, as compared to a push-pull configura-

tion in which both drivers are ground referenced, making it a

suitable application.

Features



High Peak Output Current



Low Output Impedance



Low Quiescent Supply Current



Low Propagation Delay



High Capacitive Load Capability



Wide Operating Voltage Range

Applications



RF MOSFET Driver



Push-Pull RF Generators



Multi-MHz Switch Mode Supplies



Pulse Transformer Driver



Pulse Laser Diode Driver



Pulse Generator

Fig. 1 Block Diagram and Truth Table per Driver

IN

OUT

0

0

1

1