15 A Low-Side RF MOSFET Driver

IXRFDSM607X2

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Features



High Peak Output Current



Low Output Impedance



Low Quiescent Supply Current



Low Propagation Delay



High Capacitive Load Drive Capability



Wide Operating Voltage Range



Single or Dual Driver Operation Capable

Applications



RF MOSFET Driver



Class D and E RF Generators



Multi-MHz Switch Mode Supplies



Pulse Transformer Driver



Pulse Laser Diode Driver



Pulse Generator

Description

The IXRFDSM607X2 is a dual CMOS high-speed,

high-current gate driver specifically designed to drive

MOSFETs in Class D and E HF RF applications as

well as other applications requiring ultrafast rise and

fall times or short minimum pulse widths. The

IXRFDSM607X2 can source and sink 7 A of peak cur-

rent per driver, 15 A when combined, while producing

voltage rise and fall times of less than 5 ns and mini-

mum pulse widths of 8 ns. The inputs of the driver are

compatible with TTL or CMOS and are fully immune to

latch up over the entire operating range. Designed

with small internal delays, cross conduction or current

shoot-through is virtually eliminated. The features and

wide safety margin in operating voltage and power

make the IXRFDSM607X2 unmatched in performance

and value.

The surface mount IXRFDSM607X2 is packaged in a

low-inductance surface mount package incorporating

advanced layout techniques to minimize stray lead in-

ductances for optimum switching performance. The

input and output pins can be separated or combined

for dual or single driver operation. However, both

sides are ground referenced together and cannot be

operated ground isolated from each other.

Fig. 1- Block Diagram and Truth Table

IN

OUT

0

0

1

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